Ion implantation method and application thereof

An ion implantation method for achieving angular uniformity throughout a workpiece being implanted, said workpiece having a predefined orientation at the beginning of ion implantation process, comprising:

• providing an ion beam comprising at least one beamlet and mapping said workpiece to an imaginary planar coordinate system,
• wherein each of said beamlets strikes said workpiece surface with a corresponding incident angle whereby contributing to the intensity of said ion beam upon striking said workpiece,
• wherein said coordinate system has a first axis along a first direction and a second axis along a second direction,
• wherein the incident angle of a center beamlet of said ion beam has a projection on said coordinate system, said projection forming a projection angle with said first axis;
• adjusting said workpiece orientation based on formed said projection angle;
• implanting said workpiece using said ion beam;
• rotating said workpiece by an angle of p degrees around an axis perpendicular to both said first direction and second direction;
• and
• repeating said implantation and rotation steps (n-1) times such that the product of n and p (n×p) is equal to 360 degrees thereby completing the ion implantation process.

An implanter, comprising:

• an ion beam source for generating an ion beam, said ion beam comprising at least one beamlet, wherein each of said beamlets strikes said workpiece surface with a corresponding incident angle whereby contributing to the intensity of said ion beam upon striking said workpiece;
• a workpiece holder for holding a workpiece to be implanted, said workpiece having a predefined workpiece orientation at the beginning of implantation process, said workpiece holder allowing said workpiece a rotational motion;
• a control module coupled to said ion beam source and said workpiece holder, said control module comprising a computer readable medium encoded with a computer program, said program executing actions comprising:
• instructing said ion beam source to provide said ion beam;
• mapping said workpiece to a imaginary planar coordinate system having a first axis along a first direction and a second axis along a second direction, the incident angle of a center beamlet of said ion beam having a projection on said coordinate system, said projection forming a projection angle with said first axis;
• instructing said workpiece holder to rotate said workpiece thereby adjusting said workpiece orientation based on formed said projection angle;
• instructing said ion beam source and said workpiece holder to match the relative motion of said ion beam and said workpiece to perform ion implantation of said workpiece using said ion beam;
• instructing the workpiece holder to rotate said workpiece by an angle of p degrees around an axis perpendicular to both said first direction and second direction;
• and
• repeating said implantation and rotation steps (n-1) times such that the product of n and p (n×p) is equal to 360 degrees thereby completing the ion implantation process.