Cross-over of conductive interconnects and a method of crossing conductive interconnects

A method of crossing a first elongate conductive interconnect and a separate second elongate conductive interconnect in an integrated circuit structure, comprising:

• a) forming a first elongate conductive interconnect;
• b) forming a first conductive portion separate from the first elongate conductive interconnect;
• c) forming a second conductive portion separate from the first elongate conductive interconnect;
• d) depositing first insulating material over at least a portion of the first elongate conductive interconnect;
• and
• e) electro-depositing metal to form a third electro-deposited metal portion extending over the first insulating material to interconnect the first and second conductive portions and form the second elongate conductive interconnect;
• and
• f) transferring the structure formed in a) to e) to a substrate, wherein the second elongate conductive interconnect extends the length of the integrated circuit structure.

A cross-over structure of first and second conductive means, comprising:

• first conductive means having a narrowed inner portion bounded by wider outer portions;
• second conductive means comprising:
• a first conductive portion separate from the first conductive means;
• a second conductive portion separate from the first conductive means and the first conductive portion;
• and
• a third electro-deposited metal portion interconnecting the first and second conductive portions;
• and
• first insulating means for insulating the first conductive means from the second conductive means, the first insulating means directly contacting the third electro-deposited metal portion, the first insulating means positioned over the narrowed inner portion of the first conductive means but not over the wider outer portions of the first conductive means.