Thermoelectric material and thermoelectric device
AssigneesKabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.
InventorsShinya Sakurada, Naoki Shutoh, Shinsuke Hirono
Life of this patent
Estimating the term…
Loading patent…
AssigneesKabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.
InventorsShinya Sakurada, Naoki Shutoh, Shinsuke Hirono
Estimating the term…
A thermoelectric material includes a composition represented by the following formula (A): (Tia1Zrb1Hfc1)xNiySn100-x-y (A) where 0<a1<1, 0<b1<1, 0<c1<1, a1+b1+c1=1, 30≦x≦35, and 30≦y≦35. The composition includes at least two MgAgAs crystal phases different in a lattice constant, and, assuming that X-ray diffraction peak intensity from a (422) diffraction plane of a first MgAgAs crystal phase having a smallest lattice constant and X-ray diffraction peak intensity from a (422) diffraction plane of a second MgAgAs crystal phase having a largest lattice constant be I1 and I2, respectively, a value of I1/(I1+I2) is in a range of 0.2 to 0.8.
A thermoelectric material comprising a composition represented by the following formula (A):
A thermoelectric material comprising a composition represented by the following formula (B):
A thermoelectric material comprising a composition represented by the following formula (A):
A thermoelectric material comprising a composition represented by the following formula (B):
Dependencies are inferred from the claim text.