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US 7,745,348 B2Granted
Manufacturing method of a semiconductor device
AssigneeDongbu Electronics Co., Ltd.
InventorHan-Choon Lee
Life of this patent
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Abstract
A method of manufacturing a semiconductor device employs a PEALD method including using an organometallic Ta precursor to form a TaN thin film. As a result, a conformal TaN diffusion barrier may be formed at a temperature of 250° C. or higher, so that impurities are reduced and density is increased in the TaN thin film.
Claims18
A method for manufacturing a semiconductor device, comprising:
- forming a TaN thin film from a Ta precursor comprising pentakis ethylmethylamino tantalum (PEMAT), tertbutylimido tris-dimethylamide tantalum (TBTDET), pentakis diethylamide tantalum (PDEAT), or pentakis dimethylamide tantalum (PDMAT) by plasma-enhanced atomic layer deposition (PEALD) using a plasma gas comprising hydrogen (H2) and nitrogen (N2) at a temperature of 400° C. or higher on a substrate having a plurality of predetermined structures therein and/or thereon, wherein the TaN thin film contains not more than 10% of carbon impurities;
- depositing a seed copper layer on the TaN thin film;
- and
- forming a copper line on the seed copper layer.
1 more element
Dependencies are inferred from the claim text.