Method for forming fine pattern of semiconductor device

A method for forming a pattern for a substrate, the method comprising:

• forming a first hard mask pattern having first and second structures over an underlying layer, the first and second structures defining a first space and exposing a portion of the underlying layer;
• forming a second hard mask film over the first hard mask pattern and within the first space, the underlying layer being substantially covered by the first hard mask pattern and the second mask film;
• removing the second hard mask film to provide a third structure defined within the first space, the first and second structures of the first hard mask pattern being exposed;
• removing an upper portion of the exposed first hard mask pattern such that an upper surface of the first hard mask pattern is lower than an upper surface of the second hard mask pattern;
• etching the third structure to define a second space between the first structure and the third structure and a third space between the second structure and the third structure, the second space and the third space each exposing a portion of the underlying layer;
• and
• etching the portions of the underlying layer exposed by the second space and third space.

A method for forming a pattern for a substrate, the method comprising:

• forming a first hard mask pattern having first and second structures over an underlying layer, the first and second structures defining a first space and exposing a portion of the underlying layer;
• forming a second hard mask film over the first hard mask pattern and within the first space, the underlying layer being substantially covered by the first hard mask pattern and the second mask film;
• removing the second hard mask film to provide a third structure defined within the first space, the first and second structures of the first hard mask pattern being exposed;
• removing an upper portion of the exposed first hard mask pattern such that an upper surface of the first hard mask pattern is lower than an upper surface of the second hard mask pattern;
• etching the third structure until the first, second, and third structures define a given pattern that exposes portions of the underlying layer;
• and
• etching the underlying layer to transfer the given pattern to the underlying layer.