Technique for locally adapting transistor characteristics by using advanced laser/flash anneal techniques

A method, comprising:

• selectively modifying at least one surface characteristic of a first device region and a second device region of a semiconductor device to provide different optical responses in said first device region and said second device region to a specified wavelength range of radiation, wherein said first device region represents a gate electrode of a transistor and said second device region represents at least a portion of a drain and source region of said transistor;
• prior to selectively modifying said at least one surface characteristic of said first and second device regions, substantially amorphizing a portion of said second device region;
• and
• after selectively modifying said at least one surface characteristic, irradiating said first and second device regions with a beam of said radiation to initiate a dopant activation process in said first and second device regions, wherein each surface portion irradiated by said beam is irradiated for a time interval of approximately 1 microsecond or less.

A method, comprising:

• preparing a first device region and a second device region of a semiconductor device so as to provide different optical responses in said first and second device regions to radiation of a specified wavelength range;
• prior to preparing said first and second device regions so as to provide different optical responses, substantially amorphizing a portion of at least one of said first and second device regions;
• and
• after preparing said first and second device regions so as to provide different optical responses to said radiation of said specified wavelength range, annealing each surface portion of said first and second device regions for a time interval of 1 microsecond or less by at least one of a laser anneal process and a flash anneal process using a beam of said radiation of specified wavelength to initiate at least one of a silicidation process and a dopant activation process in said first and second device regions.