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US 7,745,327 B2Granted
Method of forming a copper-based metallization layer including a conductive cap layer by an advanced integration regime
AssigneeAdvanced Micro Devices, Inc.
InventorsAxel Preusse, Michael Friedemann, Robert Seidel, Berit Freudenberg
Life of this patent
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Abstract
By appropriately designing a plurality of deposition steps and intermediate sputter processes, the formation of a barrier material within a via opening may be accomplished on the basis of a highly efficient process strategy that readily integrates conductive cap layers formed above metal-containing regions into well-approved process sequences.
Claims18
A method, comprising:
- forming a dielectric stack layer above a metal-containing region of a semiconductor device, said metal-containing region comprising a conductive cap layer forming at least one interface with said dielectric layer stack;
- forming an opening in said dielectric stack layer;
- forming a first barrier layer on sidewalls of said opening;
- performing a first sputter process to remove material from a bottom of said opening to form a recess in said conductive cap layer, controlling said first sputter process to reduce a thickness of said conductive cap layer at said bottom of said opening and control a depth of said recess wherein said recess does not extend through said conductive cap layer;
- and
- filling said opening with a metal-containing material.
3 more elements
A method, comprising:
- forming a dielectric layer stack above a metal-containing region of a semiconductor device, said metal-containing region comprising a conductive cap layer forming at least one interface with said dielectric layer stack;
- forming an opening in said dielectric stack layer;
- performing a sequence of deposition processes to form a plurality of barrier layers successively on sidewalls of said opening;
- performing a respective sputter process after at least some of said deposition processes in said sequence to remove material from a bottom of said opening to form a recess in said conductive cap layer, controlling said respective sputter process to reduce a thickness of said conductive cap layer at said bottom of said opening and control a depth of said recess wherein said recess does not extend through said conductive cap layer;
- and
- filling said opening with a metal-containing material.
3 more elements
A method, comprising:
- forming a conductive cap layer above a copper-containing metal region provided in a dielectric material of a semiconductor device;
- forming a dielectric layer stack above said conductive cap layer;
- forming an opening in said dielectric layer stack;
- forming at least a first conductive barrier layer and a second conductive barrier layer by a first deposition process and a second deposition process;
- performing a first sputter process after said first deposition process and a second sputter process after said second deposition process to remove material from a bottom of said opening and form a recess in said conductive cap layer;
- and
- controlling said first and second deposition processes and said first and second sputter processes to adjust a depth of said recess in said conductive cap layer on the basis of a target depth such that said recess does not extend through said conductive cap layer after performing said first and second deposition processes and said first and second sputter processes.
4 more elements
Dependencies are inferred from the claim text.