Semiconductor device and fabrication method thereof
AssigneeDongbu Electronics Co., Ltd.
InventorHyung Sun Yun
Life of this patent
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Abstract
In order to diversify a current control method of a semiconductor device, improve performance (including a current drive performance) of the semiconductor device, and reduce a size of the semiconductor device, a second gate may be formed inside a substrate that forms a channel upon applying a bias voltage thereto. In one aspect, the semiconductor device includes: a well region of a first conductivity; source and drain regions of a second conductivity in the well region; a first gate on an oxide layer above the well region, controlling a first channel region of a second conductivity between the source region and the drain region; and a second gate under the first channel region.
Claims19
A method for fabricating a semiconductor device, comprising:
- forming a first gate on an oxide layer above a well region in a semiconductor substrate;
- forming source and drain regions in the well region;
- implanting impurities by pocket ion implantation in the substrate to form a second gate;
- forming a plug at an end of the second gate such that the plug is exposed to an exterior of the substrate;
- forming a metal wiring at a surface of the substrate in contact with the plug;
- and
- providing a first power source for applying a first power to the first gate and a second power source for applying an external power to the second gate.
Dependencies are inferred from the claim text.