Raised source and drain process with disposable spacers
AssigneeGlobalfoundries Inc.
InventorsJohannes van Meer, Huicai Zhong
Life of this patent
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Abstract
A method for forming raised source and drain regions in a semiconductor manufacturing process employs double disposable spacers. A deposited oxide is provided between the first and second disposable spacers, and serves to protect the gate electrode, first disposable spacers and a cap layer during the dry etching of the larger, second disposable spacers. Mouse ears are thereby prevented, while the use of a second disposable spacer avoids shadow-effects during halo ion-implants.
Claims13
A method of forming raised source and drain areas, comprising the steps:
- forming a gate electrode on a substrate;
- forming a cap on the gate electrode;
- forming double disposable spacers on each sidewall of the gate electrode after forming the cap layer;
- forming raised source/drain regions on the substrate after forming the double disposable spacers;
- and
- removing the double disposable spacers after forming the raised source/drain regions, wherein
- the step of forming double disposable spacers includes forming first nitride spacers on the gate electrode and forming an oxide liner on the first nitride spacers.
A method of forming a semiconductor arrangement, comprising the steps:
- forming first disposable spacers on a gate electrode;
- forming an oxide liner on the first disposable spacers;
- forming second disposable spacers on the oxide liner;
- forming raised source/drain regions after forming the first and second disposable spacers;
- and
- removing the first and second disposable spacers after forming the raised source/drain regions,
- wherein the first and second disposable spacers are made of nitride and
- wherein the first disposable spacers completely cover sidewalls of the gate electrode during the forming of the raised source/drain regions.
Dependencies are inferred from the claim text.