Method for fabricating a semiconductor gate structure
AssigneesInfineon Technologies AG, Samsung Electronics Co., Ltd.
InventorsJingyu Lian, Jong Pyo Kim
Life of this patent
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Abstract
A method of making a semiconductor device is disclosed. A mask if formed over a first and a second region of a semiconductor body, and a vertical diffusion barrier is formed in a region between the first and second regions. A mask is then formed over the second region and the first region is left unmasked. The semiconductor body is exposed to a dopant, so that the first region is doped and the second region is blocked from the dopant by the mask and by the vertical diffusion barrier.
Claims28
A method of making a semiconductor device, the method comprising:
- providing an unpatterned gate stack layer disposed over a semiconductor body, the gate stack comprising a gate electrode layer disposed over a gate dielectric layer;
- forming a vertical diffusion barrier in a region of the gate electrode layer between a first gate region and a second gate region;
- doping the first gate region;
- and
- patterning the gate stack layer, whereby a first gate stack is formed in the first gate region and a second gate stack is formed in the second gate region.
A method of making a semiconductor device, the method comprising:
- providing a semiconductor body;
- forming a gate dielectric layer over the semiconductor body;
- forming a gate electrode layer over the gate dielectric layer;
- forming a first mask over a first gate region of the gate electrode layer and a second gate region of the gate electrode layer, wherein regions between the first gate region and second gate region comprise an exposed region not covered by the first mask;
- exposing the exposed region of the gate electrode layer to a barrier formation process, wherein a barrier region is formed in the exposed region of the gate electrode layer between the first and the second gate regions;
- removing the first mask on the first gate region and the second gate region of the gate electrode layer;
- forming a second mask on the second gate region;
- and
- doping the gate electrode layer with a dopant, wherein the gate electrode layer over the first gate region is doped, and wherein the gate electrode layer over the second gate region is blocked from the dopant by the second mask and/or by the barrier region.
A method of making a semiconductor device, the method comprising:
- providing having a semiconductor layer thereon;
- forming a first mask on a first region of the semiconductor layer and a second mask on a second region, of the semiconductor layer, wherein an unmasked region of the semiconductor layer between the first and second regions is defined;
- forming a vertical diffusion barrier in the unmasked region;
- after forming the vertical diffusion barrier, forming a third mask on the second region, wherein the first region is unmasked;
- exposing the semiconductor body to a first dopant, wherein the first region is doped, and the second region is blocked from the first dopant by the third mask and by the vertical diffusion barrier patterning the semiconductor layer;
- and
- doping a region of the semiconductor body after the patterning.
Dependencies are inferred from the claim text.