Semiconductor device and method for forming same

A method for manufacturing a semiconductor device, comprising:

• providing a semiconductor body of a first conductivity type, the semiconductor body comprising a first surface;
• forming at least one buried region of a second conductivity type in the semiconductor body, wherein the buried region is formed by deep implantation of a first dopant of the second conductivity type;
• forming at least a surface region of the second conductivity type at the first surface of the semiconductor body, wherein the buried region and the surface region are formed in spaced-relation to each other;
• and
• removing portions of the semiconductor body to partially expose the buried region and to form at least one mesa-structure which partially covers the buried region.

A method for manufacturing a semiconductor device, comprising:

• providing a semiconductor body of a first conductivity type, the semiconductor body comprising a first surface;
• forming at least one buried region of a second conductivity type in the semiconductor body, wherein the buried region is formed by deep implantation of a first dopant of the second conductivity type;
• forming at least a surface region of the second conductivity type at the first surface of the semiconductor body, wherein the buried region and the surface region are formed in spaced-relation to each other;
• and
• adjusting the doping concentration of the semiconductor body in a region arranged between the buried region and the surface region to a pre-defined peak-value.

A method for forming a junction field effect transistor, comprising:

• providing a semiconductor body of a first conductivity type, the semiconductor body comprising a first surface;
• forming at least two buried regions of a second conductivity type in the semiconductor body by deep implantation of a first dopant of the second conductivity type, wherein the buried regions are substantially arranged in a same plane and are spaced apart from each other by a spacer region of the first conductivity type;
• and
• forming at least a surface region of the second conductivity type at the first surface of the semiconductor body by a shallow implantation of a dopant of the second conductivity type such that the buried regions and the surface region are spaced apart from each other.