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US 7,745,272 B2Granted
Method for surfaced-passivated zinc-oxide
AssigneePalo Alto Research Center Incorporated
InventorsChristian G. Van de Walle, Kiesel Peter, Oliver Schmidt
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Abstract
A semiconductor device has a heterostructure including a first layer of semiconductor oxide material. A second layer of semiconductor oxide material is formed on the first layer of semiconductor oxide material such that a two dimensional electron gas builds up at an interface between the first and second materials. A passivation layer on the outer surface stabilizes the structure. The device also has a source contact and a drain contact.
Claims9
A method of manufacturing a semiconductor device, comprising:
- providing a substrate;
- providing first and second layers of semiconductor oxide material such that a two dimensional electron gas will form at an interface between the first and second layers;
- forming a passivation layer on an outer surface of a structure formed of the first and second layers;
- and
- depositing source and drain contacts on the passivation layer.
2 more elements
Dependencies are inferred from the claim text.