Method for manufacturing a semiconductor device with irradiation of single crystal semiconductor layer in an inert atmosphere

A manufacturing method of a semiconductor device comprising:

• forming a non-single-crystal semiconductor film over a substrate;
• removing a part of the non-single-crystal semiconductor film, which is in a first region over the substrate, to form a non-single-crystal semiconductor layer in a second region over the substrate;
• introducing ion species into a single-crystal semiconductor substrate to form an ion layer at a predetermined depth from a surface of the single-crystal semiconductor substrate;
• forming a bonding layer over the surface of the single-crystal semiconductor substrate;
• bonding the bonding layer to the first region over the substrate;
• applying an energy to the single-crystal semiconductor substrate to generate a crack in the ion layer so that a single-crystal semiconductor layer remains in the first region over the substrate;
• irradiating the single-crystal semiconductor layer with a laser beam in an inert atmosphere;
• and
• irradiating the non-single-crystal semiconductor layer with a laser beam in an air atmosphere.