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US 7,745,251 B2Granted
Method of fabricating CMOS image sensor
AssigneeDongbu HiTeck Co., Ltd.
InventorJeong-Su Park
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Abstract
A method of manufacturing a complimentary metal oxide semiconductor (CMOS) image sensor. The method includes a step of performing a silicide process relative to a plug for transferring electrons generated from a photodiode. The silicide of the plug blocks light irradiated through the plug, so that the performance of the image sensor may be optimized.
Claims10
A method comprising:
- forming at least one photo diode in a semiconductor substrate;
- forming at least one contact plug in the semiconductor substrate;
- and
- selectively forming a silicide region over said at least one contact plug,
- wherein said at least one photo diode and said at least one contact plug are formed in a pixel region of the semiconductor substrate;
- and said selectively forming the silicide region over said at least one contact plug comprises forming the silicide region in a peripheral region of the semiconductor substrate.
3 more elements
Dependencies are inferred from the claim text.