Photosensitive compound and photoresist composition including the same

A photoresist composition comprising:

• 1 to 85 wt % of a photosensitive compound having a structure of the following Formula 1,
• wherein, n is the number of repetition of an isopropyl oxide (—CH(CH3)CH2O—) monomer, and is an integer of 1 to 40, and R is an alkyl group of 1 to 20 carbon atoms or a cycloalkyl group of 3 to 20 carbon atoms;
• 0.05 to 15 weight parts of a photo-acid generator with respect to 100 weight parts of the photosensitive compound;
• and
• 50 to 5000 weight parts of an organic solvent with respect to 100 weight parts of the photosensitive compound.

A method for forming a photoresist pattern, comprising the step of:

• a) coating a photoresist composition on a substrate to form a photoresist layer;
• b) exposing the photoresist layer to a light;
• c) heating the exposed photoresist layer;
• and
• d) developing the heated photoresist layer to form the photoresist pattern,
• wherein the photoresist composition comprises 1 to 85 wt % of a photosensitive compound having a structure of the following Formula 1,
• wherein, n is the number of repetition of an isopropyl oxide (—CH(CH3)CH2O—) monomer, and is an integer of 1 to 40, and R is an alkyl group of 1 to 20 carbon atoms or a cycloalkyl group of 3 to 20 carbon atoms;
• 0.05 to 15 weight parts of a photo-acid generator with respect to 100 weight parts of the photosensitive compound;
• and
• 50 to 5000 weight parts of an organic solvent with respect to 100 weight parts of the photosensitive compound.