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US 7,745,073 B2Granted
Method for manufacturing a semiconductor device, stencil mask and method for manufacturing a the same
AssigneeKabushiki Kaisha Toshiba
InventorsKyoichi Suguro, Takeshi Shibata, Kazuyoshi Sugihara, Kouji Matsuo
Life of this patent
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Abstract
Preparing a stencil mask comprising a silicon thin film in which an opening for selectively irradiating charged particles to a semiconductor substrate is provided and whose irradiation surface on which the charged particles are irradiated is implanted with an impurity, and selectively irradiating charged particles to the semiconductor substrate using the stencil mask which is opposingly arranged on the semiconductor substrate.
Claims7
A stencil mask comprising:
- a silicon substrate;
- an oxide film formed on the silicon substrate;
- a silicon thin film formed on the oxide film, the silicon thin film having a plurality of openings and an impurity implanted into a surface of the silicon thin film.
A stencil mask comprising:
- a support substrate having a support portion and an opening formed in a central portion of the support portion;
- an oxide film formed on the support portion of the support substrate;
- and
- a silicon thin film formed on the oxide film, the silicon thin film having a plurality of openings which are formed in a portion corresponding to the opening of the support substrate,
- wherein an impurity is implanted into a surface of the silicon thin film.
2 more elements
Dependencies are inferred from the claim text.