Structure of a lithography mask

A method for manufacturing a reflection mask that includes, on a substrate, a reflector coating and a stack comprised of an etching barrier layer and an absorbing layer, said stack covering only a part of the reflector coating, wherein the absorbing layer is made solely of dielectric material and constitutes the surface layer of the mask, and wherein the dielectric material contains hafnium (Hf), the method comprising the following steps:

• a. Step 1:
• deposition, on a substrate (S), of alternating reflecting layers of different optical indices, forming an interference system,
• b. Step 2:
• deposition of an etching barrier layer on the aforementioned alternating layers,
• c. Step 3:
• deposition of a layer of a dielectric material for the purpose of producing the absorbing layer,
• d. Step 4:
• spreading of a lithography resin,
• e. Step 5:
• production, in the resin, of a pattern having the shape of the absorbing layer to be obtained,
• f. Step 6:
• etching of the layer of dielectric material,
• g. Step 7:
• stripping of the resin
• h. Step 8:
• etching of the etching barrier layer,
• wherein complementary etching of the absorbing layer is performed in order to allow good etching of the absorbing layer without damaging the reflective multilayer comprised of the alternating reflecting layers, said reflective multilayer being protected by the etching barrier layer.