Light emitting device and method of manufacturing method thereof and thin film forming apparatus

A method of manufacturing a light emitting device, said method comprising the steps of:

• forming a thin film transistor over a substrate;
• forming a first conductive film over the thin film transistor by vacuum evaporation in a chamber selected from a first set of chambers connected to a first transferring chamber;
• forming a second conductive film over the first conductive film by vacuum evaporation in a chamber selected from the first set of chambers;
• transferring the substrate after forming the second conductive film to a second transferring chamber connected to a second set of chambers while maintaining the vacuum state,
• forming an organic film over the second conductive film by vacuum evaporation in at least one of the chambers selected from the second set of chambers;
• transferring the substrate after forming the organic film to the first transferring chamber while maintaining the vacuum state,
• forming a first passivation film over the organic film by vacuum evaporation in a chamber selected from the first set of chambers;
• forming a light transmissive conductive film over the first passivation film by sputtering in a chamber selected from the first set of chambers;
• and
• forming a second passivation film over the light transmissive conductive film in a chamber selected from the first set of chambers,
• wherein each of the first conductive film, the second conductive film, and the organic film is formed into a pattern using a mask,
• wherein the light transmissive conductive film comprises indium oxide and zinc oxide,
• wherein the step of forming the first conductive film through the step of forming the second passivation film are conducted continuously without exposing the substrate to an outside air, and
• wherein the first transferring chamber and the second transferring chamber are connected.

A method of manufacturing a light emitting device, said method comprising the steps of:

• forming a thin film transistor over a substrate;
• forming a first conductive film over the thin film transistor by vacuum evaporation in a chamber selected from a first set of chambers connected to a first transferring chamber;
• forming a second conductive film over the first conductive film by vacuum evaporation in a chamber selected from the first set of chambers;
• transferring the substrate after forming the second conductive film to a second transferring chamber connected to a second set of chambers while maintaining the vacuum state,
• forming an organic film over the second conductive film by vacuum evaporation in at least one of the chambers selected from the second set of chambers;
• transferring the substrate after forming the organic film to the first transferring chamber while maintaining the vacuum state,
• forming a passivation film over the organic film by vacuum evaporation in a chamber selected from the first set of chambers;
• forming a light transmissive conductive film over the passivation film by sputtering in a chamber selected from the first set of chambers;
• and
• sealing the substrate with a thermally curable resin or a photosensitive resin in the first set of chambers,
• wherein each of the first conductive film, the second conductive film, and the organic film is formed into a pattern using a mask,
• wherein the light transmissive conductive film comprises indium oxide and zinc oxide,
• wherein the step of forming the first conductive film through the step of sealing the substrate are conducted continuously without exposing the substrate to an outside air, and
• wherein the first transferring chamber and the second transferring chamber are connected.

A method of manufacturing a light emitting device, said method comprising the steps of:

• forming a thin film transistor over a substrate;
• forming a first conductive film over the thin film transistor by vacuum evaporation in a chamber selected from a first set of chambers connected to a first transferring chamber;
• forming a second conductive film over the first conductive film by vacuum evaporation in a chamber selected from the first set of chambers;
• transferring the substrate after forming the second conductive film to a second transferring chamber connected to a second set of chambers while maintaining the vacuum state,
• forming an organic film over the second conductive film by vacuum evaporation in at least one of the chambers selected from the second set of chambers;
• transferring the substrate after forming the organic film to the first transferring chamber while maintaining the vacuum state;
• forming a first passivation film over the organic film by vacuum evaporation in a chamber selected from the first set of chambers;
• forming a light transmissive conductive film over the first passivation film by sputtering in a chamber selected from the first set of chambers;
• forming a second passivation film over the light transmissive conductive film in a chamber selected from the first set of chambers;
• and
• sealing the substrate with a thermally curable resin or a photosensitive resin in the first set of chambers,
• wherein each of the first conductive film, the second conductive film, and the organic film is formed into a pattern using a mask,
• wherein the light transmissive conductive film comprises indium oxide and zinc oxide,
• wherein the step of forming the first conductive film through the step of sealing the substrate are conducted continuously without exposing the substrate to an outside air, and
• wherein the first transferring chamber and the second transferring chamber are connected.