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US 7,744,843 B2Granted
Methods for bulk synthesis of carbon nanotubes
AssigneeDrexel University
InventorYury Gogotsi
Life of this patent
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Abstract
Methods for synthesizing single-wall carbon nanotubes by extracting metals from a carbide by halogen treatment at a temperature ranging between 700 to 1700° C. at ambient or low pressure are provided.
Claims34
A method for synthesizing single-wall carbon nanotubes comprising extracting metals from a carbide by halogen treatment at a temperature ranging between 700 to 1700° C. at ambient or low pressure.
A method for synthesizing carbon nanotubes, comprising:
- extracting metal from a carbide substrate using one or more halogens at a temperature in the range of from about 700° C. to about 2000° C.;
- and
- growing carbon nanotubes in a non-vacuum pressure environment on the substrate upon conversion of the carbide substrate into carbon.
Dependencies are inferred from the claim text.