Dielectric film with low coefficient of thermal expansion (CTE) using liquid crystalline resin

A method comprising:

• forming a first compound containing a first liquid crystalline component;
• casting the first compound into a first film;
• orienting the first film in a magnetic or electromagnetic field in a first direction to control a coefficient of thermal expansion (CTE) of the first film;
• curing the first film at a first temperature;
• forming a dielectric layer including the cured first film;
• and
• depositing the dielectric layer on a substrate layer in a semiconductor package, the substrate layer having a CTE that matches with CTE of the dielectric layer;
• wherein forming the dielectric layer comprises:
• forming a second compound containing a second liquid crystalline component;
• casting the second compound into a second film;
• orienting the second film in the magnetic or electromagnetic field in a second direction different than the first direction;
• and
• forming a multilayer as the dielectric layer including at least the first and second films.