Group I-III-VI quaternary or higher alloy semiconductor films
AssigneeUniversity of Johannesburg
InventorVivian Alberts
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Abstract
This invention relates to group IB-IIIA. VIA quaternary or higher alloys. More particularly, this invention relations to group IB-IIIA-VIA quaternary or pentenary alloys which are suitable for use as semiconductor films. More specifically, the invention relates to quaternary or pentenary alloys which are substantially homogeneous and are characterized by an x-ray diffraction pattern (XRD) having a main [112] peak at a 2θ angle (2θ(112)) of from 26° to 28° for Cu radiation at 40 kV, wherein a glancing incidence x-ray diffraction pattern (GIXRD) for a glancing angle of from 0.2° to 10° reflects an absolute shift in the 2θ(112) angle of less than 0.06°.
Claims39
A quaternary or higher group IB-IIIA-VIA alloy having the general formula (I):
- A(B1-xCx)(D1-yEy)2 (I)
- wherein:
- A is Cu;
- B is In;
- C is Ga;
- D is a first group VIA element (hereinafter referred to as VIA1);
- E is a second group VIA element (hereinafter referred to as VIA2);
- and
- each of x and y independently are from 0 to 1, provided that both x and y are not zero or one at the same time and if x is zero y must be smaller than 1 and if y is zero x must be smaller than one;
- and the alloy being characterized by an x-ray diffraction pattern (XRD) having a main [112] peak at a 2θ angle (2θ(112)) of from 26° to 28° for Cu radiation at 40 kV, wherein a glancing incidence x ray diffraction pattern (GIXRD) for glancing angles at 0.5°, 1°, 2°, 5°, and 10° reflects an absolute shift in the 2θ(112) angle of less than 0.06° between any one of such glancing angles and all of the other of such angles considered one at a time.
A pentenary alloy having the general formula:
- Cu(In1-xGax)(Se1-ySy)2
- wherein x is between 0 and 1 and y is between 0 and 1;
- the alloy being characterized by an x-ray diffraction pattern (XRD) having a main [112] peak at a 2θ angle (2θ(112)) of from 26° to 28° for Cu radiation at 40 kV, wherein a glancing incidence x ray diffraction pattern (GIXRD) for glancing angles at 0.5°, 1°, 2°, 5°, and 10° reflects an absolute shift in the 2θ(112) angle of less than 0.01° between any one of such glancing angles and all of the other of such angles considered one at a time.
Dependencies are inferred from the claim text.