Polishing medium for chemical-mechanical polishing, and method of polishing substrate member

A polishing medium having a property of chemical-mechanical polishing of a surface, and comprising:

• abrasive grains, an oxidizing agent for a conductor:
• a protective-film-forming agent for protecting a metal surface;
• an acid;
• and water, wherein:
• said abrasive grains have an average particle diameter of 50 nm or less and a standard deviation of particle size distribution in a value of more than 5 nm,
• said oxidizing agent is included in the polishing medium in a concentration from 0.01% to 3% by weight, and
• said polishing medium has a property of chemical-mechanical polishing of a surface having at least one of tantalum, tantalum alloy and a tantalum compound which is on silicon dioxide and which is originally covered by copper or copper alloy, and is exposed after polishing of the copper or copper alloy, the polishing medium having a property of chemical-mechanical polishing said at least one of tantalum, tantalum alloy and a tantalum compound exposed after polishing of the copper or copper alloy, and chemical-mechanical polishing said at least one of tantalum, tantalum alloy and the tantalum compound at a higher polishing rate than a polishing rate of said silicon dioxide by said polishing medium.

A polishing medium for chemical-mechanical polishing, comprising:

• an oxidizing agent;
• a protective-film-forming agent;
• abrasive grains, wherein said abrasive grains have a standard deviation of particle size distribution in a value of more than 5 nm;
• an acid;
• and
• water, wherein:
• said polishing medium has a pH of 3 or less,
• said oxidizing agent is in a concentration of from 0.01% by weight to 3% by weight,
• said polishing medium has a property of being capable of polishing a barrier layer of tantalum, a tantalum alloy or a tantalum compound, which is a barrier layer for a conductor of copper, copper alloy or copper oxide, and
• said polishing medium has a property that a ratio of a polishing rate of the barrier layer of tantalum, a tantalum alloy or a tantalum compound using the polishing medium, to a polishing rate of the conductor of copper, copper alloy or copper oxide using the polishing medium, is greater than 1.

A polishing medium comprising:

• an oxidizing agent;
• a protective-film-forming agent;
• an acid;
• and
• water;
• wherein:
• said polishing medium includes abrasive grains, said abrasive grains having a standard deviation of particle size distribution in a value of more than 5 nm,
• said polishing medium has a pH of 3 or less,
• said oxidizing agent is in a concentration of from 0.01% by weight to 3.0% by weight,
• said polishing medium has a property of being capable of chemical-mechanical polishing a surface having at least one of tantalum, a tantalum alloy and a tantalum compound, and
• said polishing medium has a property that a polishing rate of said surface having at least one of tantalum, a tantalum alloy and a tantalum compound, using the polishing medium, to a polishing rate of a conductor selected from the group consisting of copper, copper alloy and copper oxide, using the polishing medium, is greater than 1.

A polishing medium for chemical-mechanical polishing of a surface having at least one of tantalum, tantalum alloy and a tantalum compound, comprising:

• an oxidizing agent for a conductor;
• a protective-film-forming agent for protecting a metal surface;
• an acid;
• water;
• and
• abrasive grains, wherein said abrasive grains have a standard deviation of particle size distribution in a value of more than 5 nm, and wherein:
• said polishing medium has a pH of 3 or less;
• said oxidizing agent is in a concentration of from 0.01% by weight to 3.0% by weight,
• said polishing medium has a property of being capable of chemical-mechanical polishing a surface having at least one of tantalum, a tantalum alloy and a tantalum compound, and
• said polishing medium has a property that a polishing rate of said surface having at least one of tantalum, a tantalum alloy and a tantalum compound, using the polishing medium, to a polishing rate of a conductor selected from the group consisting of copper, copper alloy and copper oxide, using the polishing medium, is greater than 1.

A polishing medium for chemical-mechanical polishing, comprising:

• at least one selected from the group consisting of hydrogen peroxide, nitric acid, potassium periodate, hypochlorous acid and ozone water;
• at least one selected from benzotriazole and a derivative thereof;
• abrasive grains, wherein said abrasive grains have a standard deviation of particle size distribution in a value of more than 5 nm;
• an acid;
• and
• water, wherein:
• said polishing medium has a pH of 3 or less,
• said oxidizing agent is in a concentration of from 0.01% by weight to 3% by weight,
• said polishing medium has a property of being capable of polishing a barrier layer of tantalum, a tantalum alloy or a tantalum compound, which is a barrier layer for a conductor of copper, copper alloy or copper oxide, and
• said polishing medium has a property that a ratio of a polishing rate of the barrier layer of tantalum, a tantalum alloy or a tantalum compound using the polishing medium, to a polishing rate of the conductor of copper, copper alloy or copper oxide using the polishing medium, is greater than 1.

A polishing medium comprising:

• at least one selected from the group consisting of hydrogen peroxide, nitric acid, potassium periodate, hypochlorous acid and ozone water;
• at least one selected from benzotriazole and a derivative thereof;
• an acid;
• and
• water, wherein:
• said polishing medium includes abrasive grains, said abrasive grains having standard deviation of particle size distribution in a value of more than 5 nm,
• said polishing medium has a pH of 3 or less,
• said oxidizing agent is in a concentration of from 0.01% by weight to 3% by weight,
• said polishing medium has a property of being capable of chemical-mechanical polishing a surface having at least one of tantalum, a tantalum alloy and a tantalum compound, and
• said polishing medium has a property that a polishing rate of said surface having at least one of tantalum, a tantalum alloy and a tantalum compound, using the polishing medium, to a polishing rate of a conductor selected from the group consisting of copper, copper alloy and copper oxide, using the polishing medium, is greater than 1.

A polishing medium comprising:

• at least one selected from the group consisting of hydrogen peroxide, nitric acid, potassium periodate, hypochlorous acid and ozone water;
• at least one selected from benzotriazole and a derivative thereof;
• an acid;
• water;
• and
• abrasive grains, wherein said abrasive grains have a standard deviation of particle size distribution in a value of more than 5 nm, and wherein:
• said polishing medium has a pH of 3 or less;
• said oxidizing agent is in a concentration of from 0.01% by weight to 3.0% by weight,
• said polishing medium has a property of being capable of polishing a surface having at least one of tantalum, a tantalum alloy and a tantalum compound, and
• said polishing medium has a property that a polishing rate of said surface having at least one of tantalum, a tantalum alloy and a tantalum compound, using the polishing medium, to a polishing rate of a conductor selected from the group consisting of copper, copper alloy and copper oxide, using the polishing medium, is greater than 1.

A polishing medium for chemical-mechanical polishing, comprising:

• an oxidizing agent;
• a protective-film-forming agent;
• abrasive grains;
• an acid;
• and
• water, wherein:
• said polishing medium has a pH of 3 or less,
• said oxidizing agent is in a concentration of from 0.01% by weight to 3% by weight,
• said polishing medium has a property of being capable of polishing a barrier layer of tantalum, a tantalum alloy or a tantalum compound, which is a barrier layer for a conductor of copper, copper alloy or copper oxide,
• said polishing medium has a property that a ratio of a polishing rate of the barrier layer of tantalum, a tantalum alloy or a tantalum compound using the polishing medium, to a polishing rate of the conductor of copper, copper alloy or copper oxide using the polishing medium, is greater than 1, and
• said polishing medium has a property that a ratio of a polishing rate of the barrier layer of tantalum, a tantalum alloy or a tantalum compound using the polishing medium, to a polishing rate of silicon dioxide using the polishing medium, is greater than 10.