Transistor-type pressure sensor and method for fabricating the same
AssigneeIndustrial Technology Research Institute
InventorsChao-Feng Sung, Chih-Wei Chu, Yuh-Zheng Lee, Chao-Kai Cheng
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Abstract
A transistor-type pressure sensor is provided, having an upper and a lower substrates, a source/drain formed on the lower substrate and separated from each other, a channel layer formed between and on the source/drain, a dielectric layer and a gate. The gate is substantially formed between the source and the drain. The surface of the gate, being in contact with the dielectric layer, has a stepped surface profile, so that the channel length/width ratio can be changed due to the pressure sensed by the pressure sensor.
Claims28
A transistor-type pressure sensor, comprising:
- a lower substrate and an upper substrate;
- a transistor structure, having at least a gate, a source and a drain, and formed between the lower and the upper substrates;
- a channel layer, disposed at least between the source and the drain;
- and
- a dielectric layer, located on the source, the drain and the channel layer;
- wherein the source and the drain are located on the lower substrate and disposed apart from each other, and the gate is disposed between the upper substrate and the dielectric layer, and correspondingly located between the source and the drain approximately, and
- wherein a thin-film whose at least one layer including the gate, or the source and the drain has a stepped surface profile, and the stepped surface profile is capable of being deformed under a pressure applied to the pressure sensor, so as to change a width/length ratio of the channel layer.
A transistor-type pressure sensor, comprising:
- a lower substrate and an upper substrate;
- a transistor structure, having at least a gate, a source and a drain, and formed between the lower and the upper substrates;
- a dielectric layer, covering the lower substrate and the gate;
- and
- a channel layer, disposed on the dielectric layer and located between the source and the drain,
- wherein the source and the drain are formed on the upper substrate and disposed apart from each other, and the gate is disposed on the lower substrate and correspondingly located between the source and the drain approximately, and
- wherein a thin-film whose at least one layer including the gate, or the source and the drain has a stepped surface profile, and the stepped surface profile is capable of being deformed under a pressure applied to the pressure sensor, so as to change a width/length ratio of the channel layer.
A method for fabricating a transistor-type pressure sensor, wherein the transistor comprises a gate, a source and a drain, and a dielectric layer and a channel layer sequentially disposed among the gate, the source and the drain, the method for fabricating the transistor-type pressure sensor comprising:
- providing an upper substrate and a lower substrate;
- and
- forming the transistor between the upper and the lower substrates, wherein the gate, or the source and the drain are formed with a stepped surface profile.
Dependencies are inferred from the claim text.