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US 7,743,482 B2Granted
Fabricating method of a semiconductor device
AssigneeDongbu HiTek Co., Ltd.
InventorJae Won Han
Life of this patent
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Abstract
A semiconductor device and fabricating method thereof are provided. A first substrate with an inductor cell and a through-electrode is connected to a second substrate having an RF device circuit unit. The first substrate can be stacked on the second substrate, and a connecting electrode can electrically connect the inductor cell to the RF device circuit unit.
Claims10
A fabricating method of a semiconductor device, comprising:
- providing a first substrate comprising an inductor cell and a through-electrode;
- providing a second substrate comprising a radio frequency (RF) device circuit;
- stacking the first substrate on the second substrate;
- and
- electrically connecting the inductor cell to the RF device circuit unit;
- wherein a process for forming the first substrate comprises:
- forming the through-electrode on the first substrate;
- depositing a metal film on the first substrate;
- patterning the metal film to form the inductor cell;
- forming an insulating layer on the inductor cell;
- performing a polishing process on the insulating layer until inductor cell is exposed;
- and
- performing a polishing process on the first substrate until a lower surface of the through-electrode is exposed.
10 more elements
Dependencies are inferred from the claim text.