Semiconductor device
AssigneeDongbu HiTek Co., Ltd.
InventorJung-Ho Ahn
Life of this patent
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Abstract
A semiconductor device is disclosed. Embodiments relate to a semiconductor device which includes an active region including a source region, a drain region, and a channel region. A gate electrode, source electrodes, and a drain electrode are formed around the active region. A plurality of gate fingers diverge from the gate electrode into the channel region. A plurality of source fingers diverge from the source electrodes into the source region, the source fingers being disposed between the gate fingers in a predetermined pattern, the source fingers having at least two finger lines connected to each other via at least one grid line. A plurality of drain fingers diverge from the drain electrode into the drain region, the drain fingers being disposed between the gate fingers where the source fingers are not disposed.
Claims18
An apparatus comprising:
- an active region including a source region, a drain region, and a channel region;
- a gate electrode, source electrodes, and a drain electrode formed around the active region;
- a plurality of gate fingers diverging from the gate electrode into the channel region;
- a plurality of source fingers diverging from the source electrodes into the source region, the source fingers being disposed between the gate fingers in a predetermined pattern, the source fingers having at least two finger lines connected to each other via at least one grid line;
- and
- a plurality of drain fingers diverging from the drain electrode into the drain region, the drain fingers being disposed between the gate fingers where the source fingers are not disposed,
- wherein the at least one grid line vertically connects a first source electrode and a second source electrode outside the active region, and the at least one grid line is formed over a layer different from layers where the source fingers and the drain fingers are formed.
An apparatus comprising:
- an active region including a source region, a drain region, and a channel region;
- a gate electrode, source electrodes, and a drain electrode formed around the active region;
- a plurality of gate fingers diverging from the gate electrode into the channel region;
- a plurality of source fingers diverging from the source electrodes into the source region, the source fingers being disposed between the gate fingers in a predetermined pattern;
- and
- a plurality of drain fingers diverging from the drain electrode into the drain region, the drain fingers being disposed between the gate fingers where the source fingers are not disposed, the drain fingers having at least two finger lines connected to each other via at least one grid lines,
- wherein the at least one grid line for the source fingers includes a plurality of grid lines, and the at least one grid line for the drain fingers includes a plurality of grid lines, the grid lines for the source fingers and the grid lines for the drain fingers being alternately stacked over different layers.
Dependencies are inferred from the claim text.