Electro-static discharge and latchup resistant semiconductor device
AssigneeAnalog Devices, Inc.
InventorsHaiyang Zhu, David Foley
Life of this patent
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Abstract
The present invention relates to a semiconductor device including a substrate layer, a metal-oxide-semiconductor field-effect transistor (MOSFET), a backgate region, an isolation layer and a diode. The MOSFET includes a gate region, a source region and a drain region. The source and drain regions are embedded in the backgate region, which includes a voltage input terminal. The isolation layer is located between the backgate region and the substrate layer and has a doping type opposite that of the backgate region. The diode includes a first terminal connected to the isolation layer and a second terminal coupled to an isolation voltage source.
Claims24
A semiconductor device, comprising:
- a substrate layer;
- a metal-oxide-semiconductor field-effect transistor (MOSFET) including a gate region, a source region and a drain region;
- a backgate region including a voltage input terminal and in which the source region and the drain region are embedded;
- an isolation layer between the backgate region and the substrate layer, the isolation layer having a doping type opposite that of the backgate region;
- and
- a diode including a first terminal connected to the isolation layer and a second terminal connected to an isolation voltage source.
A method for constructing a semiconductor device, comprising:
- forming an isolation layer in a semiconductor substrate, the isolation layer having a doping type opposite that of the substrate;
- forming a backgate region on an outermost surface of the isolation layer such that the backgate region is separated from the substrate;
- forming a MOSFET including source and drain regions embedded within the backgate region;
- and
- forming a diode adjacent to the MOSFET, the diode including a first terminal connected to the isolation layer and a second terminal connected to an isolation voltage source.
Dependencies are inferred from the claim text.