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AssigneeSungkyunkwan University Foundation for Corporate Collaboration
InventorsJaichan Lee, Taekjib Choi
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The present invention is related to a ferroelectric storage medium for ultrahigh density data storage device and a method for fabricating the same. A supercell having high anisotropy is formed by controlling crystal structure and symmetry of unit structure (supercell) of artificial lattice by using an ordered alignment of predetermined ions having orientation of (perpendicular) deposition direction. Unit atomic layers of oxides having different polarization characteristic are deposited so that the supercell itself shows electric polarization having only two, upward and downward directions as one block of supercell having single-directional polarization. Oxide artificial lattices can be formed so as to have solely 180 degree domain structure, thus a single electric domain having improved anisotropic characteristic can be formed, thereby allowing capability of ultrahigh density data storage and long term data retention.
A ferroelectric oxide artificial lattice, which is fabricated by sequentially depositing unit lattice layer of at least two or more dielectric materials each having different polarization characteristic thereby forming a unit structure having anisotropic polarization characteristic being different from the constituting dielectric materials, and then by repeatedly stacking the unit structure, wherein the ferroelectric oxide artificial lattice enables nano-scaled domain and long term retention of the domain, wherein the dielectric material is represented by formula 1:
A ferroelectric oxide artificial lattice, comprising a unit structure, the unit structure being fabricated by sequentially depositing at least two or more dielectric materials with unit lattice thickness ranging from one unit lattice thickness to a plurality of unit lattice thicknesses, the dielectric materials having polarization characteristic different from each other, wherein the dielectric material is represented by formula 1:
Dependencies are inferred from the claim text.