Semiconductor device with bulb type recess gate and method for fabricating the same
AssigneeHynix Semiconductor Inc.
InventorsHyun-Sik Park, Ky-Hyun Han
Life of this patent
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Abstract
A method for fabricating a semiconductor device includes etching a substrate to form a first recess having a micro trench, etching the substrate disposed under the first recess to form a second recess having a profile substantially vertical and a width greater than a portion of the first recess where no micro trench is formed, etching the substrate disposed under the second recess to form a third recess having a profile substantially spherical, and forming a gate pattern over a resultant recess including the first to third recesses.
Claims16
A method for fabricating a semiconductor device, the method comprising:
- etching a substrate to form a first recess having a micro trench;
- etching the substrate disposed under the first recess to form a second recess having a profile substantially vertical and a width greater than a portion of the first recess where no micro trench is formed;
- etching the substrate disposed under the second recess to form a third recess having a width greater than the second recess and a profile substantially spherical;
- and
- forming a gate pattern in a resultant recess comprising the first to third recesses.
A semiconductor device, comprising:
- a first recess having a substantially vertical profile at an upper sidewall portion;
- a second recess extending from a lower portion of the first recess and having a width greater than the first recess and a profile substantially vertical at a sidewall portion;
- a third recess extending from a lower portion of the second recess and having a width greater than the second recess and a profile substantially spherical;
- and
- a gate pattern filled in the first to third recesses.
Dependencies are inferred from the claim text.