Fin device with capacitor integrated under gate electrode
AssigneeInternational Business Machines Corporation
InventorsBrent A. Anderson, Andres Bryant, Edward J. Nowak
Life of this patent
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Abstract
A fin-type field effect transistor (FinFET) has a fin having a center channel portion, end portions comprising source and drain regions, and channel extensions extending from sidewalls of the channel portion of the fin. The structure also includes a gate insulator covering the channel portion and the channel extensions, and a gate conductor on the gate insulator. The channel extensions increase capacitance of the channel portion of the fin.
Claims20
A method of making a fin-type field effect transistor (FinFET), said method comprising:
- patterning a semiconductor into a fin having two channel extensions extending from a central channel portion of said fin in opposite directions;
- covering said central channel portion of said fin and said two channel extensions with a gate insulator;
- forming a gate conductor on said gate insulator;
- and
- doping end portions of said fin to form source and drain regions.
A method of making a fin-type field effect transistor (FinFET), said method comprising:
- forming a semiconductor on an insulator;
- patterning said semiconductor into a fin having two channel extensions extending from sidewalls of a central channel portion of said fin in opposite directions;
- covering said central channel portion of said fin and said two channel extensions with a gate insulator;
- forming a gate conductor on said gate insulator;
- and
- doping end portions of said fin to form source and drain regions.
A method of making a fin-type field effect transistor (FinFET), said method comprising:
- patterning a semiconductor into a fin having two channel extension extending perpendicularly from a central channel portion of said fin in opposite directions;
- covering said central channel portion of said fin and said two channel extension with a gate insulator;
- forming a gate conductor on said gate insulator;
- and
- doping end portions of said fin to form source and drain regions.
Dependencies are inferred from the claim text.