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US 7,741,179 B2Granted
Method of manufacturing flash semiconductor device
AssigneeDongbu HiTek Co., Ltd.
InventorHyun-Soo Shin
Life of this patent
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Abstract
A method of manufacturing a flash semiconductor device minimizes a loss of dopant caused by dopant out-diffusion. A trench is formed in a semiconductor substrate. At least one poly gate is formed in the semiconductor substrate including the trench. An RCS (Recess Common Source) region is formed in the trench. Dopant ions are implanted into the RCS region, and an annealing process is applied to the RCS region.
Claims9
A method comprising:
- forming a trench in a semiconductor substrate;
- forming at least one poly gate in the semiconductor substrate including the trench;
- forming a recess common source region, wherein forming the recess common source region comprises:
- coating regions except the trench with photoresist;
- forming a pattern corresponding to the gate poly, and performing an etching process using the pattern as an etching mask;
- and removing the photoresist in the trench;
- implanting dopant ions into said recess common source region;
- and
- applying an annealing process to the recess common source region.
6 more elements
Dependencies are inferred from the claim text.