Method for fabricating semiconductor device and exposure mask

A method of manufacturing a semiconductor device comprising:

• forming a conductive film over a substrate;
• forming a first photoresist film over the conductive film;
• exposing to the first photoresist film a first mask pattern having an interconnection pattern;
• exposing to the first photoresist film a second mask pattern having a hole positioned at an end or a bent portion of the interconnection pattern where a hole to be connected to the interconnection pattern is to be formed;
• developing the first photoresist film which has been exposed to the first mask pattern and the second mask pattern;
• patterning the conductive film with the first photoresist film as a mask to form an interconnection layer having the interconnection pattern;
• forming a second insulating film over the substrate with the interconnection layer formed on;
• forming a second photoresist film on the second insulating film;
• exposing to the second photoresist film a third mask pattern having a plurality of holes to be connected to the interconnection pattern;
• developing the second photoresist film which has been exposed to the third mask pattern;
• etching the second insulating film with the second photoresist film as a mask to form contact holes in the second insulating film;
• and
• burying a conductive film in the contact holes to form contact plugs connected to the interconnection layer, wherein
• pattern data of the second mask pattern are given by extracting a hole positioned at the end or the bent portion of the interconnection pattern of the first mask pattern, from a pattern data of the third mask pattern.

A method of manufacturing a semiconductor device comprising:

• forming a first insulating film over a substrate;
• forming a first photoresist film over the first insulating film;
• exposing to the first photoresist film a first mask pattern having an interconnection pattern;
• exposing to the first photoresist film a second mask pattern having a hole positioned at an end or a bent portion of the interconnection pattern where a hole to be connected to the interconnection pattern is to be formed;
• developing the first photoresist film which has been exposed to the first mask pattern and the second mask pattern;
• etching the first insulating film with the first photoresist film as a mask to form an interconnection trench having the interconnection pattern;
• burying a conductive film in the interconnection trench to form an interconnection layer having the interconnection pattern;
• forming a second insulating film over the substrate with the interconnection layer formed on;
• forming a second photoresist film on the second insulating film;
• exposing to the second photoresist film a third mask pattern having a plurality of holes to be connected to the interconnection pattern;
• developing the second photoresist film which has been exposed to the third mask pattern;
• etching the second insulating film with the second photoresist film as a mask to form a contact hole in the second insulating film;
• and
• burying a conductive film in the contact hole to form a contact plug formed on the end or the bent portion of the interconnection layer.