Method for selecting photomask substrate, method for manufacturing photomask, and method for manufacturing semiconductor device

A method for manufacturing a photomask, comprising:

• dividing a chip area scheduled to be arranged on a photomask substrate regarding a specific transfer pattern layer into a management pattern area in which an element pattern changed in shape by birefringence of the photomask substrate is arranged, and an area other than the management pattern area;
• setting a standard value of a size of birefringence of an area in which the management pattern area of the photomask substrate is arranged;
• inspecting the size of the birefringence of the area in which the management pattern area is arranged, the area being arranged in each of a plurality of photomask substrate candidates which have no chip patterns;
• selecting a photomask substrate, in which the size of the birefringence satisfies the standard value, as a photomask substrate of the specific transfer pattern layer from the plurality of photomask substrate candidates;
• and
• forming the plurality of element patterns included in the chip area on the selected photomask substrate to manufacture the photomask of the specific transfer pattern layer.

A method for manufacturing a semiconductor device, comprising:

• dividing a chip area scheduled to be arranged on a photomask substrate regarding a specific transfer pattern layer into a management pattern area in which an element pattern changed in shape by birefringence of the photomask substrate is arranged, and an area other than the pattern area;
• setting a standard value of a size of birefringence of an area in which the management pattern area of the photomask substrate is arranged;
• inspecting the size of the birefringence of the area in which the management pattern area is arranged, the area being arranged in each of a plurality of photomask substrate candidates which have no chip patterns;
• selecting a photomask substrate, in which the size of the birefringence satisfies the standard value, as a photomask substrate of the specific transfer pattern layer from the plurality of photomask substrate candidates;
• repeating the selection of the photomask substrate of the specific transfer pattern layer for the plurality of transfer pattern layers to form the plurality of element patterns included in the chip area for each corresponding transfer pattern layer on the plurality of photomask substrates selected for each transfer pattern, thereby manufacturing a plurality of photomasks;
• and
• combining a photolithography process using the plurality of photomasks with another process to process at least one of a surface of the semiconductor substrate and a thin film formed on the surface of the semiconductor substrate.