Method of growing III group nitride single crystal and III group nitride single crystal manufactured by using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsOleg Ledyaev, Ki Ho Park, Si Hyuk Lee, Soo Min Lee
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Abstract
A method of growing a III group nitride single crystal by using a metal-organic chemical vapor deposition (MOCVD) process, the method including: preparing an r-plane (1-102) substrate; forming a nitride-based nucleation layer on the substrate; and growing a nonpolar a-plane nitride gallium single crystal on the nitride-based nucleation layer while altering increase and decrease of a ratio of V/III group to alternate a horizontal growth mode and a vertical growth mode.
Claims9
A method of growing a III group nitride single crystal by using a metal-organic chemical vapor deposition (MOCVD) process, the method comprising:
- preparing an r-plane (1-102) substrate;
- forming a nitride-based nucleation layer on the substrate;
- and
- growing a nonpolar a-plane (11-20) gallium nitride single crystal on the nitride-based nucleation layer while alternately increasing and decreasing a ratio of V/III group to alternate between a horizontal growth mode and a vertical growth mode.
Dependencies are inferred from the claim text.