US 7,735,056 B2Granted

Automated circuit design dimension change responsive to low contrast condition determination in photomask phase pattern

AssigneeTexas Instruments Incorporated

InventorsThomas J. Aton, Carl Albert Vickery, III, Shane R. Palmer

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Abstract

The present application is directed to methods of forming a phase pattern for an integrated circuit feature described in a design database as having a first target dimension. In one embodiment, the method comprises determining whether forming a phase pattern for the integrated circuit feature described in the design database will result in one or more phase blocks of the same phase type being positioned in relative proximity so as to result in a low contrast condition, selecting a second target dimension that will avoid the low contrast condition if the low contrast condition will result, and forming the phase pattern for an integrated circuit feature having the second target dimension. Systems for forming phase patterns and photomasks comprising the phase patterns of the present application are also disclosed.

Claims27

Dependent claims

A method of fabricating an integrated circuit using a photomask comprising a phase pattern for forming an integrated circuit feature described in a design database as having a first target dimension, the method comprising:

providing the photomask, including:
determining whether forming the integrated circuit using the photomask with a phase pattern for the integrated circuit feature having the first target dimension as described in the design database will result in one or more phase blocks of the same phase type being positioned in relative proximity to each other so as to result in a low contrast condition;
automatically changing the first target dimension to a second target dimension that will avoid the low contrast condition if the determining step determines that a low contrast condition will result;
and
forming the phase pattern for the integrated circuit feature having the second target dimension;
and
forming the integrated circuit with the integrated circuit feature having the second target dimension instead of the first target dimension using the photomask.

4 more elements

A system for generating a phase pattern for a photomask, the system comprising:

a database operable to store data describing established design parameters of an integrated circuit to be fabricated with at least one integrated circuit feature having a first target dimension;
and
a module coupled to the database, wherein the module comprises a set of instructions operable to:
determine whether forming the integrated circuit using a photomask with a phase pattern for the integrated circuit feature having the first target dimension as described in the database will result in one or more phase blocks of the same phase type being positioned in relative proximity to each other so as to result in a low contrast condition;
and
generate some output to automatically alter the phase pattern to change the first target dimension in the established design parameters to a second target dimension for fabricating the integrated circuit that will avoid the low contrast condition if the low contrast condition will result.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application: 11/392,869Filed 30 Mar 2006
Published: US 2007/0231711 A14 Oct 2007
Granted: 8 Jun 2010
Term ends: Not estimatedThe source records don’t support an estimate.

Classification3 codes

G03F 1/70
Preparation processes not covered by groups G03F1/20 - G03F1/50: adapting basic layout or design of masks to lithographic process requirements,…
G03F 1/26
Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles…
G03F
Photomechanical production of textured or patterned surfaces