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US 7,732,922 B2Granted
Simultaneous grain modulation for BEOL applications
AssigneeInternational Business Machines Corporation
InventorsChih-Chao Yang, Louis C. Hsu, Rajiv V. Joshi
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Abstract
The invention is directed to an improved semiconductor structure, such that within the same insulating layer, Cu interconnects embedded within the same insulating level layer have a different Cu grain size than other Cu interconnects embedded within the same insulating level layer.
Claims8
A semiconductor structure, comprising:
- a first and second opening within an insulating layer, said first and second opening within a same insulating layer;
- a barrier material deposited on said insulating layer in said first and second opening;
- a copper grain promotion material is deposited on said barrier material of said first opening;
- a copper seed is deposited on said copper grain promotion material of said first opening and directly on said barrier material of said second opening;
- copper is electroplated on said copper seed within said first and second openings;
- and,
- wherein said copper grain promotion material increases grain size of said electroplated copper in said first opening, such that an average grain size of said electroplated copper grown in said first opening is larger than an average grain size of said electroplated copper in said second opening, said first and second opening within said same insulating level layer.
4 more elements
Dependencies are inferred from the claim text.