Power module
AssigneeRohm Co., Ltd.
InventorsMasao Saito, Takukazu Otsuka, Keiji Okumura
Life of this patent
Estimating the term…
Abstract
A power module includes a substrate having first and second main substrate surfaces; a semiconductor device disposed on the first main substrate surface, and having a first main surface on which a first main electrode is formed, and a second main surface on which a second main electrode in contact with the first main substrate surface is formed; a heat conduction portion disposed on the first main substrate surface in a residual region of a region on which the semiconductor device is disposed; and an upper cooling portion disposed on the heat conduction portion.
Claims29
A power module comprising:
- a substrate having a first main substrate surface and a second main substrate surface opposite the first main substrate surface;
- a semiconductor device disposed on the first main substrate surface, and having a first main surface on which a first main electrode is formed, and a second main surface on which a second main electrode in contact with the first main substrate surface is formed, the second main surface being opposite the first main surface;
- a heat conduction portion disposed on the first main substrate surface in a residual region of a region on which the semiconductor device is disposed, the heat conduction portion having anisotropic thermal conductive properties, in which thermal conductivity in a normal line direction of the first main substrate surface is greater than thermal conductivities in directions different from the normal line direction;
- and
- an upper cooling portion disposed on the heat conduction portion.
A power module comprising:
- a substrate having a first main substrate surface and a second main substrate surface opposite the first main substrate surface;
- a semiconductor device disposed on the first main substrate surface, and having a first main surface on which a first main electrode is disposed, and a second main surface on which a second main electrode in contact with the first main substrate surface is disposed, the second main surface being opposite the first main surface;
- a heat conduction portion disposed on the first main substrate surface in a residual region of a region on which the semiconductor device is disposed;
- and
- an upper cooling portion disposed on the heat conduction portion,
- wherein the substrate comprises a structure in which a metal pattern layer, an insulating layer and a heat spreader are stacked on one another, and an end portion of the heat conduction portion is in contact with a surface of the heat spreader, the surface being exposed in an opening portion in the metal pattern layer and the insulating layer.
Dependencies are inferred from the claim text.