Semiconductor package
AssigneeKabushiki Kaisha Toshiba
InventorTsuyoshi Hasegawa
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Abstract
A semiconductor package is provided with a package main body including a base portion configured by joining thin plates integrally, and a semiconductor device accommodating portion provided on one surface of the base portion, electric terminals electrically connected to a semiconductor device in the accommodating portion and exposed to an outer surface of the accommodating portion, and a heat high-transfer element including at least one layer-like member provided in the base portion. The layer-like member is configured independent of the base portion by a material having a thermal conductivity higher than that of the base portion, and extends from a position corresponding to a heat-generation site of the semiconductor device to a position in an outside of the heat-generation site corresponding position.
Claims5
A semiconductor package comprising:
- a package main body including a base portion which has a first surface and a second surface on a side opposite to the first surface and which is configured by bringing a plurality of thin plates in close contact with each other to join the plates integrally, and
- a semiconductor device accommodating portion which is provided on the first surface and which accommodates a semiconductor device therein;
- electric terminals which are provided in the semiconductor device accommodating portion, which are electrically connected to the semiconductor device, and which are exposed to an outer surface of the semiconductor device accommodating portion;
- and
- a heat high-transfer element including at least one layer-like member which is provided in the base portion, which is configured independent of the base portion by a material having a thermal conductivity higher than that of the base portion, which is disposed in the base portion so as to extend from a position corresponding to a heat-generation site of the semiconductor device to a position in an outside of the heat-generation site corresponding position, and which transfers a heat generated at the heat-generation site of the semiconductor device from the heat-generation site corresponding position to the outside position in the base portion.
Dependencies are inferred from the claim text.