Methods of die sawing and structures formed thereby
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShin-Puu Jeng, Hao-Yi Tsai
Life of this patent
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Abstract
A structure includes a substrate having a plurality of scribe line areas surrounding a plurality of die areas. Each of the die areas includes at least one first conductive structure formed over the substrate. Each of the scribe line areas includes at least one active region and at least one non-active region. The active region includes a second conductive structure formed therein. The structure further includes at least one first passivation layer formed over the first conductive structure and second conductive structure, wherein at least a portion of the first passivation layer within the non-active region is removed, whereby die-sawing damage is reduced.
Claims11
A structure comprising:
- a substrate comprising a plurality of scribe line areas surrounding a plurality of die areas, each of the die areas comprising at least one first conductive structure formed over the substrate, each of the scribe line areas comprising at least one active region and at least one non-active region, the active region comprising a second conductive structure formed therein;
- at least one first passivation layer formed over the first conductive structure and second conductive structure, wherein at least a portion of the first passivation layer within the non-active region is removed, whereby die-sawing damage is reduced;
- and
- at least one material layer formed between the substrate and the first passivation layer, wherein at least a portion of the material layer within the non-active region is also removed, and wherein an exposed top most surface of the at least one material layer within the non-active region is lower than a top surface of the first conductive structure.
A sawed die comprising:
- a substrate having a die area comprising at least one conductive structure formed therein and a scribe line area comprising at least one active region and at least one non-active region;
- at least one first passivation layer formed over the conductive structure within the die area and within the scribe line area, wherein at least a portion of the first passivation layer within the non-active region is removed whereby, die-sawing damage is reduced;
- and
- at least one material layer formed between the substrate and the first passivation layer, wherein at least a portion of the material layer within the non-active region is also removed, and, wherein an exposed top most surface of the at least one material layer within the non-active region is lower than a top surface of the conductive structure.
A sawed die comprising:
- a semiconductor substrate having a die area comprising at least one conductive structure formed therein and a scribe line area comprising at least one active region and at least one non-active region;
- at least one first passivation layer formed over the conductive structure within the die area and within the scribe line area, wherein at least a portion of the first passivation layer within the non-active region is removed, whereby die-sawing damage is reduced;
- and
- at least one dielectric material layer formed between the substrate and the first passivation layer, wherein an entire thickness of the dielectric material layer within the non-active region is also removed, and wherein a top surface of the semiconductor substrate is exposed within the non-active region.
Dependencies are inferred from the claim text.