Semiconductor apparatus and method of manufacturing the same
AssigneeNEC Electronics Corporation
InventorKouzi Hayasi
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Abstract
A semiconductor apparatus comprises a plurality of transistor devices including a control terminal being inputted with a control signal and a first and a second terminals that a current flows therein according to the control signal, and a plurality of substrate conductive portions each formed in a region different from a region where the plurality of transistor devices are formed therein, wherein the transistor devices are connected to the substrate conductive portions, and each of the substrate conductive portion includes a semiconductor layer separated from other substrate conductive portions.
Claims20
A semiconductor apparatus, comprising:
- a substrate;
- a plurality of transistor devices formed on the substrate, each transistor device including a control terminal being inputted with a control signal and first and second terminals through which a current flows according to the control signal;
- and
- a plurality of substrate conductive portions each formed in a region different from a region where the plurality of transistor devices are formed therein, each of the plurality of substrate conductive portions connecting the substrate through a ballast resistor,
- wherein the plurality of transistor devices are connected to the plurality of substrate conductive portions,
- wherein each of the plurality of substrate conductive portions includes a semiconductor layer separated from other substrate conductive portions by a Deep Trench Isolation device, and
- wherein the semiconductor layer has a same conductivity type as the substrate.
A semiconductor apparatus comprising:
- a substrate;
- a plurality of transistor devices formed on the substrate, each transistor device including a control terminal being inputted with a control signal and first and second terminals through which a current flows according to the control signal;
- a plurality of substrate conductive portions each formed in a region different from a region where the plurality of transistor devices are formed therein, each of the plurality of substrate conductive portions connecting the substrate through a ballast resistor;
- a plurality of polysilicon layers contacting the substrate conductive portions;
- and
- external electrodes placed on the polysilicon layers,
- wherein the plurality of transistor devices are connected to the different external electrodes, and
- wherein an area at which the external electrode contacts the polysilicon layer is horizontally shifted with respect to an area at which the polysilicon layer contacts each of said plurality of the substrate conductive portions.
Dependencies are inferred from the claim text.