Semiconductor device including triple-stacked structures having the same structure

A semiconductor device, comprising:

• at least one capacitor;
• at least one resistor;
• a plurality of triple-stacked structures all having the same structure, each of said triple-stacked structures comprising one lower electrode layer, at least one upper electrode layer and one dielectric layer sandwiched by said lower electrode layer and said upper electrode layer;
• a first via structure connected to an end of said at least one upper electrode layer;
• a second via structure connected to an end of said one lower electrode layer;
• a conductive pattern layer above the first via structure and the second via structure;
• and
• a third via structure,
• wherein a size of said lower electrode layer of each of said plurality of triple-stacked structures is the same with each other,
• wherein said at least one capacitor includes one of said plurality of triple-stacked structures,
• wherein said at least one resistor includes another one of said plurality of triple-stacked structures,
• wherein the conductive pattern layer is adapted to connect the first via structure to the second via structure, and
• wherein the conductive pattern layer is also adapted to connect the third via structure with the first via structure and the second via structure.