Integrated circuit with high voltage junction structure
AssigneeSystem General Corp.
InventorsChiu-Chih Chiang, Chih-Feng Huang, You-Kuo Wu, Long Shih Lin
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Abstract
The high voltage integrated circuit comprises a P substrate. An N well barrier is disposed in the substrate. Separated P diffusion regions forming P wells are disposed in the substrate for serving as the isolation structures. The low voltage control circuit is located outside the N well barrier. A floating circuit is located inside the N well barrier. In order to develop a high voltage junction barrier in between the floating circuit and the substrate, the maximum space of devices of the floating circuit is restricted.
Claims11
A high voltage integrated circuit comprising:
- a P substrate;
- a N well barrier in the substrate;
- a control circuit, disposed outside the N well barrier;
- a floating circuit, located inside the N well barrier;
- and
- a high voltage barrier, formed for isolating the floating circuit from the control circuit when a predetermined high voltage is applied to the floating circuit, wherein, there is a distance between the floating circuit and the high voltage barrier, the distance is larger than 0 micro-meter.
A high voltage integrated circuit, comprising:
- a P substrate;
- a N well barrier in the substrate;
- a control circuit, disposed outside the N well barrier, comprising at least an N type MOSFET device and at least a P type MOSFET device;
- a floating circuit, located inside the N well barrier, comprising at least an N type MOSFET device and at least a P type MOSFET device;
- and
- a high voltage barrier, formed for isolating the floating circuit from the control circuit when a predetermined high voltage is applied to the floating circuit, wherein, there is a distance between the floating circuit and the high voltage barrier, the distance is larger than 0 micro-meter.
Dependencies are inferred from the claim text.