High-voltage semiconductor switching element

A high-voltage semiconductor switching element comprising:

• a base region of a first conductivity type formed in a semiconductor substrate of a second conductivity type;
• at least one emitter region of the second conductivity type selectively formed in the base region;
• at least one sense region of the second conductivity type selectively formed in the base region so as to be spaced away from the emitter region;
• a collector region of the first conductivity type formed in the semiconductor substrate so as to be spaced away from the base region;
• a drain region of the second conductivity type formed in the semiconductor substrate so as to be spaced away from the base region;
• a gate insulating film formed at least on a part of the base region located closer to the collector region with respect to the emitter region;
• a gate electrode formed on the gate insulating film;
• a collector electrode formed above the semiconductor substrate and electrically connected with both the collector region and the drain region;
• an emitter electrode formed above the semiconductor substrate and electrically connected with both the base region and the emitter region;
• and
• a sense electrode formed above the semiconductor substrate and electrically connected with the sense region,
• wherein the emitter region and the sense region are located so as to be aligned in a second direction perpendicular to a first direction going from the collector region toward the base region;
• and
• the width of the sense region, the width of the emitter region, the width of a part of the base region that is adjacent to the sense region, and the width of a part of the base region that is adjacent to the emitter region in the second direction are set in such a manner that a ratio of a collector current to a sense current varies in a desired manner in accordance with variation in the collector current.

A high-voltage semiconductor switching element comprising:

• a base region of a first conductivity type formed in a semiconductor substrate of a second conductivity type;
• at least one emitter region of the second conductivity type selectively formed in the base region;
• at least one sense region of the second conductivity type selectively formed in the base region so as to be spaced away from the emitter region;
• a collector region of the first conductivity type formed in the semiconductor substrate so as to be spaced away from the base region;
• a gate insulating film formed at least on a part of the base region located closer to the collector region with respect to the emitter region;
• a gate electrode formed on the gate insulating film;
• a collector electrode formed above the semiconductor substrate and electrically connected with the collector region;
• an emitter electrode formed above the semiconductor substrate and electrically connected with both the base region and the emitter region;
• and
• a sense electrode formed above the semiconductor substrate and electrically connected with the sense region,
• wherein the emitter region and the sense region are located so as to be aligned in a second direction perpendicular to a first direction going from the collector region toward the base region;
• and
• the resistance of a part of the emitter region that is located between the emitter electrode and the gate electrode is equal to the resistance of a part of the sense region that is located between the sense electrode and the gate electrode.

A high-voltage semiconductor switching element comprising:

• a base region of a first conductivity type formed in a semiconductor substrate of a second conductivity type;
• at least one emitter region of the second conductivity type selectively formed in the base region;
• at least one sense region of the second conductivity type selectively formed in the base region so as to be spaced away from the emitter region;
• a collector region of the first conductivity type formed in the semiconductor substrate so as to be spaced away from the base region;
• a drain region of the second conductivity type formed in the semiconductor substrate so as to be spaced away from the base region;
• a gate insulating film formed at least on a part of the base region located closer to the collector region with respect to the emitter region;
• a gate electrode formed on the gate insulating film;
• a collector electrode formed above the semiconductor substrate and electrically connected with both the collector region and the drain region;
• an emitter electrode formed above the semiconductor substrate and electrically connected with both the base region and the emitter region;
• and
• a sense electrode formed above the semiconductor substrate and electrically connected with the sense region,
• wherein the emitter region and the sense region are located so as to be aligned in a second direction perpendicular to a first direction going from the collector region toward the base region;
• and
• the resistance of a part of the emitter region that is located between the emitter electrode and the gate electrode is equal to the resistance of a part of the sense region that is located between the sense electrode and the gate electrode.