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US 7,732,347 B2Granted
Semiconductor device and fabrication process of semiconductor device
AssigneeFujitsu Limited
InventorMakoto Nakamura
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Abstract
A method of fabricating a semiconductor device on a Si substrate includes a first step of forming an insulation film containing an oxide of Zr or Hf on a Si substrate, a second step of forming a gate electrode film on the insulation film, a third step of patterning the gate electrode film by an etching process, a fourth step of annealing, after the third step, the insulation film in a processing gas ambient containing halogen, and a fifth step of removing the insulation film applied with the annealing process.
Claims5
A method of fabricating a semiconductor device, comprising:
- a first step of forming an insulation film containing an oxide of Zr or Hf over a Si substrate;
- a second step of forming a gate electrode film over said insulation film;
- a third step of patterning said gate electrode film by an etching process,
- a fourth step of annealing, after said third step, said insulation film in a processing gas ambient containing CCl4;
- and
- a fifth step of removing said insulation film applied with said annealing process,
- wherein said fourth step is conducted at a temperature of 400° C.-500° C.
4 more elements
Dependencies are inferred from the claim text.