Method for using a modified post-etch clean rinsing agent
AssigneeTexas Instruments Incorporated
InventorsPhillip Daniel Matz, Trace Hurd
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Abstract
The present invention provides a method for manufacturing an integrated circuit. In one embodiment, the method includes etching one or more openings within a substrate using an etch tool, and subjecting the one or more openings to a post-etch clean, wherein a delay time exists between removing the substrate from the etch tool and the subjecting the one or more opening to the post-etch clean. This method may further include exposing the substrate having been subjected to the post-etch clean to a rinsing agent, wherein a resistivity of the rinsing agent is selected based upon the delay time.
Claims14
A method for manufacturing an integrated circuit, comprising:
- etching one or more openings within a substrate using an etch tool;
- subjecting the one or more openings to a post-etch clean, wherein a delay time exists between removing the substrate from the etch tool and the subjecting the one or more openings to the post-etch clean;
- adjusting a resistivity of a deionized water rinsing agent by varying the amount of CO2 in the deionized water rinsing agent based on the delay time to maximize a removal of remaining residue;
- and
- exposing the substrate having been subjected to the post-etch clean to the deionized water rinsing agent.
A method for manufacturing an integrated circuit, comprising:
- etching one or more openings within a dielectric layer of a substrate;
- subjecting the one or more openings to a post-etch clean including cleaning with a chemical solvent followed by rinsing with deionized water;
- and
- adjusting the pH and resistivity of the deionized water based on a delay time between the etching and the post-etch clean by varying an amount of CO2 in the deionized water.
Dependencies are inferred from the claim text.