Method for forming pattern in semiconductor device
AssigneeHynix Semiconductor Inc.
InventorsJung-Seock Lee, Ky-Hyun Han
Life of this patent
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Abstract
A method for forming a semiconductor device includes forming an etch target layer, forming a sacrificial hard mask layer having a metal layer and a carbon-based material layer on the etch target layer, forming a photoresist pattern on the carbon-based material layer, etching the carbon-based material layer by the photoresist pattern until a remaining carbon-based material portion has a predetermined thickness, etching the remaining carbon-based material portion until a corresponding metal layer portion is exposed to form a carbon-based material pattern, and etching the metal layer by using the carbon-based material pattern to form a hard mask pattern for forming the pattern.
Claims17
A method for forming an etch pattern in a semiconductor device, comprising:
- forming a hard mask layer comprising a tungsten layer and an amorphous carbon layer on an etch target layer;
- selectively etching the amorphous carbon layer using a gas mixture including N2 and H2 or N2 and Cl2 to form an amorphous carbon pattern;
- and
- etching the tungsten layer by using the amorphous carbon pattern to form a hard mask pattern for forming the etch pattern.
A method for forming an etch pattern in a semiconductor device, comprising:
- forming a hard mask layer comprising a tungsten layer and an amorphous carbon layer on a etch target layer;
- selectively etching the amorphous carbon layer until a remaining amorphous carbon layer portion has a certain thickness;
- etching the remaining amorphous carbon layer portion until a corresponding tungsten layer portion is exposed to form an amorphous carbon pattern;
- etching the tungsten layer comprises removing a portion of the exposed tungsten layer;
- etching a remaining tungsten layer portion by using the amorphous carbon pattern as an etch mask to form a tungsten pattern;
- and
- etching the etch target layer by using the tungsten pattern as an etch mask to form an etch pattern.
Dependencies are inferred from the claim text.