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US 7,732,304 B2Granted
Method of manufacturing semiconductor device
AssigneeDongbu HiTek Co., Ltd.
InventorYoung-Seok Jeong
Life of this patent
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Abstract
A method of manufacturing a semiconductor device according to embodiments includes forming an interlayer dielectric film with a damascene pattern over a semiconductor substrate having a lower metal wire. A seed layer may be formed over the interlayer dielectric film including the damascene pattern. Impurities generated during the formation of the seed layer be removed through an annealing process using H2. A copper wire may then be formed by filling the damascene pattern.
Claims20
A method of manufacturing a semiconductor device, comprising:
- forming an interlayer dielectric film with a damascene pattern over a semiconductor substrate having a lower metal wire;
- forming a seed layer over the interlayer dielectric film including the damascene pattern;
- removing impurities generated during the formation of the seed layer through an annealing process using H2;
- and
- forming a copper wire by filling the damascene pattern.
2 more elements
Dependencies are inferred from the claim text.