Fabricating method of semiconductor device
AssigneeDongbu HiTek Co., Ltd.
InventorHyun Ju Lim
Life of this patent
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Abstract
A method of fabricating a semiconductor device is provided. Spacers can be formed on adjacent gate structures and used as an ion implantation mask for forming source/drain regions. The spacers can include a nitride layer and an oxide layer. An etch stop layer can be provided between the gate structures, and the oxide layer can be removed from the spacers. A first oxide layer formed below the nitride layer can be protected from being etched away during removal of the oxide layer from the spacers by the etch stop layer. The etch stop layer and the first oxide layer can be removed, and an interlayer dielectric layer can be deposited.
Claims10
A method of fabricating a semiconductor device, comprising:
- forming a first gate and a second gate adjacent the first gate on a semiconductor substrate;
- sequentially forming a first oxide film, a nitride film, and a second oxide film on the semiconductor substrate including the first gate and the second gate;
- performing an etch-back process on the second oxide film and the nitride film to form spacers;
- forming a etch stop pattern between the first gate and the second gate such that the first oxide film is not exposed between the spacers of the first gate and the second gate;
- removing the second oxide film from the spacers;
- removing the etch stop pattern;
- and
- etching the first oxide film exposed by the spacers.
Dependencies are inferred from the claim text.