Transistor of the I-MOS type comprising two independent gates and method of using such a transistor
AssigneeCommissariat a l'Energie Atomique
InventorsCyrille Le Royer, Olivier Faynot, Laurent Clavelier
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Abstract
The transistor comprises a source and a drain separated by a lightly doped intermediate zone. The intermediate zone forms first and second junctions respectively with the source and with the drain. The transistor comprises a first gate to generate an electric field in the intermediate zone, on the same side as the first junction, and a second gate to generate an electric field in the intermediate zone, on the same side as the second junction.
Claims7
An I-MOS-type transistor comprising a source formed by a first zone doped by a first type of doping, a drain formed by a second zone doped by a second type of doping, and a lightly doped intermediate zone arranged between the source and drain, the intermediate zone forming first and second junctions respectively with the source and drain, the transistor comprising a first gate to generate an electric field in the intermediate zone, on the same side as the first junction and a second gate to generate an electric field in the intermediate zone on the same side as the second junction.
Dependencies are inferred from the claim text.