Method of manufacturing semiconductor element
AssigneeOki Semiconductor Co., Ltd.
InventorsTakashi Ohsako, Hirotaka Mori, Katsuji Yoshida
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Abstract
A method of manufacturing a semiconductor device includes a process of forming a gate electrode having a metallic silicide layer on a semiconductor substrate, a process of decreasing boundaries of grains on the surface of the metallic silicide layer, at least a portion of which is exposed, and a process of forming spacers comprising an oxide film on the side wall of the gate electrode; in this order. Thus, abnormal oxidation of the metallic silicide layer is avoided.
Claims9
A method of manufacturing a semiconductor element, comprising:
- forming a gate electrode on a semiconductor substrate, the gate electrode having a metallic silicide layer, a metallic polysilicon layer under the metallic silicide layer, and an SiN layer on the metallic silicide layer;
- after said forming of the gate electrode including the SiN layer, decreasing grain boundaries on a surface of the metallic silicide layer, at least a portion of the surface of the metallic silicide layer being exposed, said decreasing of the grain boundaries comprising performing a heat treatment on the metallic silicide layer in an atmosphere consisting of a mixture gas of chief elements of nitrogen and ammonia and an oxidizable gas of less than 100 ppm;
- and
- forming a spacer consisting of an oxide film on a side wall of the metallic polysilicon layer and the metallic silicide layer of the gate electrode;
- wherein said decreasing of the grain boundaries is performed after performing a reduced pressure process.
A method of manufacturing a semiconductor element, comprising:
- forming a gate electrode on a semiconductor substrate, the gate electrode having a metallic silicide layer, a metallic polysilicon layer under the metallic silicide layer, and an SiN layer on the metallic silicide layer;
- after said forming of the gate electrode including the SiN layer, decreasing grain boundaries on a surface of the metallic silicide layer, at least a portion of the surface of the metallic silicide layer being exposed, said decreasing of the grain boundaries being performed after performing a reduced pressure process and comprises performing a heat treatment on the metallic silicide layer in an atmosphere including an oxidizable gas of less than 100 ppm;
- and
- forming a spacer consisting of an oxide film on a side wall of the metallic polysilicon layer and the metallic silicide layer of the gate electrode.
Dependencies are inferred from the claim text.