Semiconductor device and method of fabricating the same
AssigneeDongbu HiTek Co., Ltd.
InventorJin Ha Park
Life of this patent
Estimating the term…
Abstract
A semiconductor device and a fabricating method thereof are provided. The semiconductor device can include a first chip having transistors of only the NMOS type, a second chip having transistors of only the PMOS type, and an interconnection electrically connecting the first and second chips to each other. By forming NMOS and PMOS transistors on separate chips, the total number of implant photo processes can be decreased, thereby reducing the fabrication cost.
Claims14
A semiconductor device, comprising:
- a first chip comprising transistors that are only of the n-channel metal oxide semiconductor (NMOS) type;
- a second chip comprising transistors that are only of the p-channel metal oxide semiconductor (PMOS) type;
- an interconnection electrically connecting the first chip and the second chip;
- and
- a third chip electrically connected to the first chip and the second chip, wherein the third chip comprises cell driving transistors for driving the transistors of the first chip and the transistors of the second chip.
A semiconductor device, comprising:
- a first chip comprising transistors that are only of the n-channel metal oxide semiconductor (NMOS) type;
- a second chip comprising transistors that are only of the p-channel metal oxide semiconductor (PMOS) type;
- an interconnection electrically connecting the first chip and second chip;
- a third chip comprising cell driving-NMOS transistors;
- and
- a fourth chip comprising cell driving-PMOS transistors.
A method of fabricating a semiconductor device, comprising:
- forming transistors on a first chip, wherein all transistors formed on the first chip are NMOS transistors;
- forming transistors on a second chip, wherein all transistors formed on the second chip are PMOS transistors;
- and
- electrically connecting the first chip and the second chip,
- wherein the first chip and the second chip are arranged adjacent to each other in the same plane;
- and wherein the method further comprises:
- preparing a third chip comprising cell driving transistors for driving the transistors of the first chip and the transistors of the second chip;
- and
- electrically connecting the third chip to the first chip and the second chip to provide a system by interconnection structure.
A method of fabricating a semiconductor device, comprising:
- forming transistors on a first chip, wherein all transistors formed on the first chip are NMOS transistors;
- forming transistors on a second chip, wherein all transistors formed on the second chip are PMOS transistors;
- and
- electrically connecting the first chip and the second chip,
- wherein the first chip and the second chip are arranged adjacent to each other in the same plane;
- wherein the method further comprises:
- preparing a third chip comprising cell driving-NMOS transistors;
- and
- preparing a fourth chip comprising cell driving-PMOS transistors.
Dependencies are inferred from the claim text.